Instrument Details: Dual Ion Beam Sputtering Deposition (DIBSD) Facility

Make: Elettrorava s.p.a, Italy

Salient Features:

  • Physical vapor deposition technique.
  • Growth of thin films/ nanostructure is possible in Ar, O2, and N2 atmosphere.
  • Fine control over thin film growth is possible (+/-1% uniformity on a 3” wafer).
  • Low pressure deposition (10-4 mBar), chamber background pressure is 1×10-8 mBar.
  • Enhanced adhesion and microstructure control.
  • Independent control of ion beam parameters allows user to engineer film for desired properties.
  • High-quality growth at room temperature to up to 1000oC is possible.
  • Can be used for dry etching/patterning, and in-situ annealing purposes.

Materials can be deposited:

  • Dielectrics (TiO2, SiO2, Si3N4,Y2O3, HfO2, ZrO2, ITO, FTO etc.)
  • Metals (Au, Ag, Pt, Al, Ti etc.)
  • Semiconductors (Si-Ge, GaN, AlGaN, ZnO, PbTe, PbSe, MgZnO, CdZnO, CIGS, CdS etc.)

Collimated RF Ion Source under Operation

Kaufman and Robinson Ion Source

DIBSD Operation

DIBSD chamber with automated loadlock, heating assembly, UHV pumps, chiller, and gas cylinders
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