With the advent of emerging architectures and focus on application specific design, the transistor cross-section has emerged as an essential scaling component. The research work carried out at IIT Indore has showcased the prominence of cross-sectional area over gate length scaling to achieve a sharp current switching in 3-dimensional junctionless transistor. Junctionless devices with a wider fin and lower aspect ratio are best suited to achieve drain current transition with an almost ideal subthreshold swing. For more details, please click on the link.
Figure showing the variation of subthreshold swing on aspect ratio of a 3d junctionless transistor. PI denotes the total power generated in the device.